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Recommended Products. Curso de Eletricidade basica a distancia, com certificado. Eletrica Basica- Apostila Senai - scribd.

Devendo ser apagadas em 24 horas. Por isso, neste captulo estudaremos o arranjo fsico das partculas que compem o tomo e a maneira como essas partculas se comportam. Eletrica Basica- Apostila senai - ebah. Apostila de Eletricista Instalador Predial. Apostila Subestacao.

Apostila Do Senai Modelagem. Thus the base-current contribution represented by 1.

eletronica analogica apostila pdf

In addition, since the collector-base junc- tion is now forward biased, there is a new base-current component due to injection of carriers from the base to the collector.

These two effects result in a base current IB in sat- uration, which is larger than in the forward-active region for a given collector current Ic. As the forced P is made lower with respect to PF, the device is said to be more heavily saturated.

The minority-carrier concentration in saturation shown in Fig. This can be represented as a linear superposition of the two dotted distributions as shown. The justification for this is that the terminal currents depend linearly on the concentrations np 0 and np WB.

This picture of device carrier concentrations can be used to derive some general equations de- scribing transistor behavior. Each of the distributions in Fig. Equation 1. Note the different scales for positive and negative currents and voltages. The junction current that flows under reverse-bias conditions is often called the leakage current of the junction.

Returning to Fig.

The total collector current Ic is given by ICR plus the fraction of IEF that reaches the collector allowing for recombination and reverse emitter injection. Similarly, the total emitter current is composed of IEF plus the fraction of ICR that reaches the emitter with the transistor acting in an inverted mode. An inverse current gain PR is also defined and has typical values 1 to 5. This is the current gain of the transistor when operated inverted and is much lower than PF because the device geometry and doping densities are designed to maximize PF.

The inverse-active region of device operation occurs for VCE negative in an npn transistor and is shown in Fig. In order to display these characteristics adequately in the same figure as the forward-active region, the negative voltage and current scales have been expanded.

The inverse-active mode of operation is rarely encountered in analog circuits. Equations 1. These equations are the Ebers-Moll equations. In the forward-active region, they degenerate into a form similar to that of 1.

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